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From: Yonggang Cui (cui AT homer DOT phys.uh.edu) Date: Tue May 14 2002 - 17:18:52 EDT
I'm a new comer to MOSIS and MAGIC, and am considering the TSMC0.35um process to fabricate my ICs. I have the following questions which make me confusing. 1) There are difference between the MAGIC SCMOS technology layers and the layer map on MOSIS website. For example, we have ndiff or pdiff in MAGIC SCMOS technology to form drain and source of transistor. However, we have no such layers in layer map on MOSIS website. We can only find active, n plus select and p plus select layers. Both of them are based on SCMOS technology. Why are there some difference? 2) For some processes like TSMC0.35um, we can sue 3.3V for core and 5V for I/O simutaneousely. We're also told by MOSIS that we need thick oxide for 5V in this process. However, what we can find in MOSIS is a thickactive layer in addition to active layer. That's fine. It has been explained very well on MOSIS website that how to use these two layers to build 5V transistor. And what we can find in MAGIC SCN4M_SUBM.20.TSMC technology is a thickoxide layer, no oxide layer, no active layer. So, how to build a 5V transistor in MAGIC SCN4M_SUBM.20.TSMC?
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