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Magic Mailing List |
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From: Jeff W. Sondeen (sondeen AT rcf-fs DOT usc.edu) Date: Tue May 14 2002 - 16:50:20 EDT
Yonggang Cui writes: > I'm a new comer to MOSIS and MAGIC, and am considering the TSMC0.35um > process to fabricate my ICs. I have the following questions which make me > confusing. > > 1) There are difference between the MAGIC SCMOS technology layers and the > layer map on MOSIS website. For example, we have ndiff or pdiff in MAGIC > SCMOS technology to form drain and source of transistor. However, we have > no such layers in layer map on MOSIS website. We can only find active, n > plus select and p plus select layers. Both of them are based on SCMOS > technology. Why are there some difference? > where you draw ndiff, 'cif write' will output active (CAA) and nselect (CSN) into the cif file. you can see this if you set the cif input style to one of the styles that shows select (like lambda=0.10(cps)) and then 'cif read'. it's discussed a bit in ftp://ftp.isi.edu/pub/sondeen/magic/new/README > 2) For some processes like TSMC0.35um, we can sue 3.3V for core and 5V for > I/O simutaneousely. We're also told by MOSIS that we need thick oxide for > 5V in this process. However, what we can find in MOSIS is a thickactive > layer in addition to active layer. That's fine. It has been explained very > well on MOSIS website that how to use these two layers to build 5V > transistor. And what we can find in MAGIC SCN4M_SUBM.20.TSMC technology is > a thickoxide layer, no oxide layer, no active layer. So, how to build a > 5V transistor in MAGIC SCN4M_SUBM.20.TSMC? with that techfile, when you paint 'to' over 'ndiff' you get 'hvndiff'. that means active with thick oxide over it. why don't you look at some layout with 'to', like under pub/sondeen/magic/tanner_pads_ported_to_magic/scn035-pads/mTSMs035Pf_release-2000-03-07/ /jeff
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