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From: Chris Fearing (fearincj AT cliftonlabs DOT com) Date: Wed Oct 01 2003 - 17:11:04 EDT
I am trying to import an SCMOS_DEEP library from mosis's website and am getting many drc errors, and layers that do not show up, or show up wrong. I was wondering if anyone had any experience with this library, or possibly importing other libraries from Tanner. http://www.mosis.org/Technical/Designsupport/std-cell-library-scmos.html The only modifications I have made were to change the cif names in the downloaded cif file from the synonym, to the magic-recognizeable names (CMF->CM1,CVA->CV1...etc.) Here is my setup debian linux magic 7.1 attempting to use any SCN5M_DEEP.12 or mSCN5M_DEEP.12 tech files from the 2001a release of tech files cif istyle lambda=.12(p) Many of these errors seem to occur due to compound layers like "diffusion" and "transistor." Is there a way to turn off these questionable layers so that only common layers like ndiffusions, pdiffusion, poly, etc. show up? Can't overlap those layers P-Select must overlap Diffusion by 2 (Mosis #4.2) N-Select must overlap Diffusion by 2 (Mosis #4.2) Diffusion width < 3 (Mosis #2.1) N-well overlap of P-Diffusion < 6 (Mosis #2.4) Silicide-Block spacing to other Transistor < 2 (Mosis #20.5) P-Transistor space to N-Ohmic < 4 (Mosis #4.1) N-Diffusion,P-Diffusion overhang of Transistor < 4 (Mosis #3.4) P-Diffusion spacing to P-Ohmic < 9 (Mosis #2.3+2.4) Silicide-Block spacing to other Poly < 2 (Mosis #20.5) Poly spacing to Poly contact < 4 (Mosis #5.5.b) Transistor cannot bend in this process (Mosis #?.?) Diffusion spacing to Diffusion contact < 4 (Mosis #6.5.b) N-Diffusion spacing to P-Diffusion < 12 (Mosis #2.3+2.3) P-Diffusion,P-Ohmic width < 3 (Mosis #4.4) Poly spacing to Diffusion < 1 (Mosis #3.5) Poly spacing to fill layer (fp) < 3 (Mosis #3.2) Poly spacing < 3 (Mosis #3.2) Poly spacing < 4 (Mosis #3.2.a) P-Diffusion spacing to N-Ohmic < 4 (Mosis #2.5) Poly overhang of Transistor < 3 (Mosis #3.3) N-Diffusion,N-Ohmic width < 3 (Mosis #4.4) N-Transistor space to P-Ohmic < 4 (Mosis #4.1) N-Diffusion spacing to N-Ohmic < 9 (Mosis #2.3+2.4) Diffusion spacing < 3 (Mosis #2.2) N-Diffusion spacing to P-Ohmic < 4 (Mosis #2.5) P-Ohmic spacing to nwr,pnwr (for Fig1b Resistor) < 3 (Mosis #2.4) P-Ohmic spacing to rnw,prnw < 3 (Mosis #2.4) P-Ohmic width in N-Diffusion < 4 (Mosis #2.1) N-Diffusion width in P-Ohmic < 4 (Mosis #2.1) N-Ohmic spacing to P-Ohmic < 6 (Mosis #2.4+2.4) Ohmic-Diffusion area < 16 (Mosis #+++) N-Ohmic width in P-Diffusion < 4 (Mosis #2.1) P-Diffusion width in N-Ohmic < 4 (Mosis #2.1) Poly width < 2 (Mosis #3.1) Metal1 spacing to fill layer (fm1) < 3 (Mosis #7.2) Metal1 spacing < 3 (Mosis #7.2) Metal1 width < 3 (Mosis #7.1) Metal2 spacing to fill layer (fm2) < 4 (Mosis #9.2) Poly,Diffusion overlap of GC contact < 1 (Mosis #5.2) Silicide-Block spacing to GC contact < 2 (Mosis #20.3) N-Transistor,P-Transistor spacing to Generic contact < 2 (Mosis #6.4) Generic contact spacing to Poly contact,Diffusion contact < 3 (Mosis #5.3) nwr (for Fig1b resistor) spacing to GC contact < 5 (Mosis #Fig1b) Silicide-Block overlap of Silicide-Block polyR/activeR < 2 (Mosis #20.15) Silicide-Block width < 4 (Mosis #20.1) Silicide-Block polyR width < 5 (Mosis #20.6) Diffusion overhang of Silicide-Block < 3 (Mosis #20.17) Silicide-Block spacing < 4 (Mosis #20.2) Silicide-Block polyR spacing < 7 (Mosis #20.13) Metal1 must overlap GC contact by 1 (Mosis #7.3,7.4) Metal2 width < 3 (Mosis #9.1) Metal2 spacing < 4 (Mosis #9.2) Silicide-Block spacing to Diffusion contact,Poly contact < 1 (Mosis #20.3)
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