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Hi, are you still needing help with this ?  1) are you using the
techfile with the right value of lambda ?  if you're cif'ing in with a
techfile whose lambda is .12, then the 2 lambda poly width must be .24
microns in the cif file.  2) some layout in general is not very "magic
friendly" (magic prefers all layers of contact stacks to be the same
cell, not separate overlapped cells, for example).  these files may
be some help:

 ftp://ftp.isi.edu/pub/sondeen/magic/new/README
 ftp://ftp.isi.edu/pub/sondeen/magic/tanner_pads_ported_to_magic/

/jeff


Chris Fearing writes:

 > I am trying to import an SCMOS_DEEP library from mosis's website and am 
 > getting many drc errors, and layers that do not show up, or show up wrong.  I 
 > was wondering if anyone had any experience with this library, or possibly 
 > importing other libraries from Tanner.
 > 
 > http://www.mosis.org/Technical/Designsupport/std-cell-library-scmos.html
 > 
 > The only modifications I have made were to change the cif names in the 
 > downloaded cif file from the synonym, to the magic-recognizeable names 
 > (CMF->CM1,CVA->CV1...etc.)
 > 
 > Here is my setup
 > debian linux
 > magic 7.1
 > attempting to use any SCN5M_DEEP.12 or mSCN5M_DEEP.12 tech files from the 
 > 2001a release of tech files
 > cif istyle lambda=.12(p)
 > 
 > Many of these errors seem to occur due to compound layers like "diffusion" and 
 > "transistor."  Is there a way to turn off these questionable layers so that 
 > only common layers like ndiffusions, pdiffusion, poly, etc. show up?
 > 
 > 
 > Can't overlap those layers
 > P-Select must overlap Diffusion by 2 (Mosis #4.2)
 > N-Select must overlap Diffusion by 2 (Mosis #4.2)
 > Diffusion width < 3 (Mosis #2.1)
 > N-well overlap of P-Diffusion < 6 (Mosis #2.4)
 > Silicide-Block spacing to other Transistor < 2 (Mosis #20.5)
 > P-Transistor space to N-Ohmic < 4 (Mosis #4.1)
 > N-Diffusion,P-Diffusion overhang of Transistor < 4 (Mosis #3.4)
 > P-Diffusion spacing to P-Ohmic < 9 (Mosis #2.3+2.4)
 > Silicide-Block spacing to other Poly < 2 (Mosis #20.5)
 > Poly spacing to Poly contact < 4 (Mosis #5.5.b)
 > Transistor cannot bend in this process (Mosis #?.?)
 > Diffusion spacing to Diffusion contact < 4 (Mosis #6.5.b)
 > N-Diffusion spacing to P-Diffusion < 12 (Mosis #2.3+2.3)
 > P-Diffusion,P-Ohmic width < 3 (Mosis #4.4)
 > Poly spacing to Diffusion < 1 (Mosis #3.5)
 > Poly spacing to fill layer (fp) < 3 (Mosis #3.2)
 > Poly spacing < 3 (Mosis #3.2)
 > Poly spacing < 4 (Mosis #3.2.a)
 > P-Diffusion spacing to N-Ohmic < 4 (Mosis #2.5)
 > Poly overhang of Transistor < 3 (Mosis #3.3)
 > N-Diffusion,N-Ohmic width < 3 (Mosis #4.4)
 > N-Transistor space to P-Ohmic < 4 (Mosis #4.1)
 > N-Diffusion spacing to N-Ohmic < 9 (Mosis #2.3+2.4)
 > Diffusion spacing < 3 (Mosis #2.2)
 > N-Diffusion spacing to P-Ohmic < 4 (Mosis #2.5)
 > P-Ohmic spacing to nwr,pnwr (for Fig1b Resistor) < 3 (Mosis #2.4)
 > P-Ohmic spacing to rnw,prnw < 3 (Mosis #2.4)
 > P-Ohmic width in N-Diffusion < 4 (Mosis #2.1)
 > N-Diffusion width in P-Ohmic < 4 (Mosis #2.1)
 > N-Ohmic spacing to P-Ohmic < 6 (Mosis #2.4+2.4)
 > Ohmic-Diffusion area < 16 (Mosis #+++)
 > N-Ohmic width in P-Diffusion < 4 (Mosis #2.1)
 > P-Diffusion width in N-Ohmic < 4 (Mosis #2.1)
 > Poly width < 2 (Mosis #3.1)
 > Metal1 spacing to fill layer (fm1) < 3 (Mosis #7.2)
 > Metal1 spacing < 3 (Mosis #7.2)
 > Metal1 width < 3 (Mosis #7.1)
 > Metal2 spacing to fill layer (fm2) < 4 (Mosis #9.2)
 > Poly,Diffusion overlap of GC contact < 1 (Mosis #5.2)
 > Silicide-Block spacing to GC contact < 2 (Mosis #20.3)
 > N-Transistor,P-Transistor spacing to Generic contact < 2 (Mosis #6.4)
 > Generic contact spacing to Poly contact,Diffusion contact < 3 (Mosis #5.3)
 > nwr (for Fig1b resistor) spacing to GC contact < 5 (Mosis #Fig1b)
 > Silicide-Block overlap of Silicide-Block polyR/activeR < 2 (Mosis #20.15)
 > Silicide-Block width < 4 (Mosis #20.1)
 > Silicide-Block polyR width < 5 (Mosis #20.6)
 > Diffusion overhang of Silicide-Block < 3 (Mosis #20.17)
 > Silicide-Block spacing < 4 (Mosis #20.2)
 > Silicide-Block polyR spacing < 7 (Mosis #20.13)
 > Metal1 must overlap GC contact by 1 (Mosis #7.3,7.4)
 > Metal2 width < 3 (Mosis #9.1)
 > Metal2 spacing < 4 (Mosis #9.2)
 > Silicide-Block spacing to Diffusion contact,Poly contact < 1 (Mosis #20.3)
 > 

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